MACROBIZES CO., LTD.

TO-251 Plastic-Encapsulate Transistors



3DD13002 TRANSISTOR (NPN)
FEATURES
Power dissipation
P
CM:
1.25 W (Tamb=25℃)
Collector current
I
CM:
1 A
Collector-base voltage
V
(BR)CBO
: 600 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 100µA, I
E
=0 600 V
Collector-emitter breakdown voltage V(BR)CEO Ic=1mA, IB=0 400 V
Emitter-base breakdown voltage V(BR)EBO I
E
= 100µA, I
C
=0 6 V
Collector cut-off current ICBO VCB= 600V, IE=0 100 µA
Emitter cut-off current IEBO VEB= 6V, IC=0 100 µA
h
FE(1)
V
CE
= 10V, I
C
= 200 mA 9 40
DC current gain
h
FE(2)
V
CE
= 10V, I
C
=250 µA 5
Collector-emitter saturation voltage VCE(sat) IC=200mA, IB= 40 mA 0.8 V
Base-emitter saturation voltage VBE(sat) IC=200mA, IB= 40 mA 1.1 V
Transition frequency fT
V
CE
=10V, Ic=100mA
f =1MHz
5 MHz
Fall time tf 0.5 µs
Storage time ts
I
C
=1A, I
B1
=-I
B2
=0.2A
V
CC
=100V
2.5 µs


CLASSIFICATION OF hFE
(2)

Rank
Range 9-15 15-20 20-25 25-30 30-35 35-40












1 2 3
TO-251



1. BASE

2. COLLECTOR

3. EMITTER