DATE NAME
DRAWN
CHECKED
REVISIONS
APPROVED
DWG.NO.
Fuji Electric Co.,Ltd.
This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd.
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Fuji Power MOSFET SuperFAP-G series Target Specification PRELIMINARY
1) Package TO-220F15R
2) Absolute Maximum Ratings (Tc=25℃　 unless otherwise specified)
Items Units
Drain-Source Voltage V
Continuous Drain Current A
Pulsed Drain Current A
Gate-Source Voltage V
Repetitive and Non-Repetitive
Maximum Avalanche Current
A
Non-Repetitive
Maximum Avalanche Energy
mJ
*1
Maximum Drain-Source dV/dt dVDS/dt kV/us
Peak Diode recovery dV/dt dV/dt kV/us *2
W
W
Operating and Storage
Æ
Temperature range
Æ
3)Electrical Characteristics (Tch=25℃ unless otherwise specified)
Items Symbols Test Conditions min. typ. max. Units
Drain-Source Breakdown Voltage BV
DSS
I
D
=250uA V
GS
=0V 500 --- --- V
Gate Threshold Voltage V
GS
(th) I
D
=250uA V
DS
=V
GS
3.0 --- 5.0 V
V
DS
=500V T
ch
=25
Æ
--- --- 25 μ A
V
GS
=0V T
ch
=125
Æ
--- --- 250
μ
A
Gate-Source Leakage Current I
GSS
V
GS
=±30V V
DS
=0V --- --- 100 μ A
Input Capacitance C
iss
V
DS
=25V --- 1580 2370
Output Capacitance C
oss
V
GS
=0V --- 240 360 pF
Reverse Transfer Capacitance C
rss
f=1MHz --- 12 18
Total Gate Charge Qg Vcc=250V --- 32 48
Gate to Source Charge Qgs I
D
=19A --- 16 24 nC
Gate to Drain (Miller) Charge Qgd V
GS
=10V --- 12 18
Avalanche Capability I
AV
L=1.25mH Tch=25
Æ
19 --- --- A
Diode Forward On-Voltage V
SD
I
F
=19A,VGS=0V,Tch=25℃ --- 1.0 1.5 V
4) Thermal Characteristics
Items Symbols Test Conditions min. typ. max. Units
Channel to Case Rth(ch-c) 1.316
Æ
/W
Channel to Ambient Rth(ch-a) 58.0
Æ
/W
*1 L=1.25mH,Vcc=50V
*2 I
F≤
-I
D
,-di/dt=50A/ µs,Vcc ≤BV
DSS
,Tch ≤150°C
2SK3683-01MR (500V/0.38
Ω
/19A)
V
GS
I
AR
E
AS
Symbols
V
DS
I
D
I
D(pulse)
±30
19
Maximum Power Dissipation
P
D @Ta=25℃
P
D　＠Ｔ c=25℃
T
ch
T
stg
95
2.16
150
-55 ～ +150
Ratings
500
±19
±76
Ω--- 0.38
245.3
20
5
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance VGS=10V ---
I
DSS
R
DS
(on) I
D
=9.5A


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