2SK3498
2002-02-27 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3498

DC-DC Converter, Relay Drive and Motor Drive
Applications


• Low drain-source ON resistance: R
DS (ON)
= 4.0 Ω (typ.)
• High forward transfer admittance: Y
fs
 = 0.6 S (typ.)
• Low leakage current: I
DSS
= 100 µA (max) (V
DS
= 400 V)
• Enhancement-model: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)

Maximum Ratings (Tc = 25°C)ç
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
400 V
Drain-gate voltage (R
GS
= 20 kΩ) V
DGR
400 V
Gate-source voltage V
GSS
±30 V
DC (Note 1) I
D
1
Drain current
Pulse (Note 1) I
DP
3
A
Drain power dissipation P
D
20 W
Single pulse avalanche energy
(Note 2)
E
AS
113 mJ
Avalanche current I
AR
1 A
Repetitive avalanche energy (Note 3) E
AR
2 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
−55 to150 °C

Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
th (ch-c)
6.25 °C/W
Thermal resistance, channel to ambient R
th (ch-a)
125 °C/W
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: V
DD
= 90 V, T
ch
= 25°C (initial), L = 183 mH, R
G
= 25 Ω,
I
AR
= 1 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with
caution.
ç
Unit: mmç



JEDEC ―
JEITA SC-64
TOSHIBA 2-7B1B
Weight: 0.36 g (typ.)



JEDEC ―
JEITA ―
TOSHIBA 2-7J1B
Weight: 0.36 g (typ.)