MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SK2139 is N-Channel Power MOS Field Effect Transistor
designed for high voltage switching applications.
FEATURES
• Low On-Resistance
RDS(on) = 1.5 Ω MAX. (VGS = 10 V, ID = 2.5 A)
• Low Ciss Ciss = 930 pF TYP.
• High Avalanche Capability Ratings
• Isolate TO-220 (MP-45F) Package
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage VDSS 600 V
Gate to Source Voltage VGSS ±30 V
Drain Current (DC) ID(DC) ±5.0 A
Drain Current (pulse)* ID(pulse) ±20 A
Total Power Dissipation (Tc = 25 ˚C) PT1 35 W
Total Power Dissipation (TA = 25 ˚C) PT2 2.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Single Avalanche Current** IAS 5.0 A
Single Avalanche Energy** EAS 8.3 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
2SK2139
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
PACKAGE DIMENSIONS
(in millimeters)
10.0±0.3 4.5±0.2
3.2±0.2
2.7±0.2
2.5±0.11.3±0.2
1.5±0.2
2.54
0.7±0.1
2.54
0.65±0.1
123
3±0.1
4±0.2
15.0±0.3
12.0±0.2
13.5MIN.
1. Gate
2. Drain
3. Source
MP-45F (ISOLATED TO-220)
Body
Diode
Source
Drain
Gate
Document No. TC-2512
(O. D. No. TC-8071)
Date Published January 1995 P
Printed in Japan
© 1995
DATA SHEET