2SC5876
Transistor
1/3
Medium power transistor (60V, 0.5A)
2SC5876


!Features
1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA)
2) Low saturation voltage, typically
(Typ. : 150mV at IC = 100mA, IB = 10mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2088


!Applications
!External dimensions (Units : mm)
Each lead has same dimensions
Abbreviated symbol : VS
UMT3
1.25
2.1
0.3
0.15
0.1Min.
(
3
)
0.9
0.7
0.2
0.65
(
2
)
2.01.3
(
1
)
0.65
(1)Emitter
(2)Base
(3)Collector

Small signal low frequency amplifier
High speed switching


!Structure
NPN Silicon epitaxial planar transistor


!Packaging specifications
Taping
2SC5876
Type T106
3000
Package
Basic ordering unit
(pieces)
Code



!Absolute maximum ratings (Ta=25°C)
Parameter
V
V
V
A
mW
∗1 Pw=10ms
∗2 Each terminal mounted on a recommended land.
∗2
∗1
°C
A
°C
VCBO
VCEO
IC
PC
Tj
VEBO
ICP
Tstg
Symbol
60
60
6
0.5
1.0
200
150
−55~+150
Limits Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature