2SC5692
2001-12-12 1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5692

High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications


• High DC current gain: h
FE
= 400 to 1000 (I
C
= 0.3 A)
• Low collector-emitter saturation voltage: V
CE (sat)
= 0.14 V (max)
• High-speed switching: t
f
= 120 ns (typ.)

Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
100 V
Collector-emitter voltage V
CEX
80 V
Collector-emitter voltage V
CEO
50 V
Emitter-base voltage V
EBO
7 V
DC I
C
2.5
Collector current
Pulse I
CP
4.0
A
Base current I
B
250 mA
DC 625
Collector power
dissipation
t = 10 s
P
C

(Note) 1000
mW
Junction temperature T
j
150 °C
Storage temperature range T
stg
−55 to 150 °C
Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm
2
)

Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
CBO
V
CB
= 100 V, I
E
= 0   100 nA
Emitter cut-off current I
EBO
V
EB
= 7 V, I
C
= 0   100 nA
Collector-emitter breakdown voltage V
(BR) CEO
I
C
= 10 mA, I
B
= 0 50   V
h
FE
(1)

V
CE
= 2 V, I
C
= 0.3 A 400  1000
DC current gain
h
FE
(2)

V
CE
= 2 V, I
C
= 1 A 200  

Collector-emitter saturation voltage V
CE (sat)
I
C
= 1 A, I
B
= 20 mA   0.14 V
Base-emitter saturation voltage V
BE (sat)
I
C
= 1 A, I
B
= 20 mA   1.10 V
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz  13  pF
Rise time t
r
 40 
Storage time t
stg
 500  Switching time
Fall time t
f

See Figure 1 circuit diagram.
V
CC
∼
−
30 V, R
L
= 30 Ω
I
B1
= −I
B2
= 33.3 mA
 120 
ns

Industrial Applications
Unit: mmç



JEDEC ―
JEITA ―
TOSHIBA 2-3S1A
Weight: 0.01 g (typ.)