TECHNICAL DATA

NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/317
Devices Qualified Level
2N2369A
2N2369AU
2N2369AUA
2N2369AUB
2N4449
2N4449U
2N4449UA
2N4449UB




JAN
JANTX
JANTXV

MAXIMUM RATINGS
Ratings Symbol All UB All others Unit
Collector - Emitter Voltage V CEO 20 15 Vdc
Emitter - Base Voltage V EBO 6.0 4.5 Vdc
Collector - Base Voltage V CBO 40 Vdc
Collector - Emitter Voltage V CES 40 Vdc
@ T A = +25 0 C @ T C = +25 0 C
Total Power Dissipation 2N2369A; 2N4449
All UA
All UB
All U
P T
0.50 (1)
0.50 (5)
0.40 (6)
0.60 (3)
1.2 (2)
1.2 (2)
1.4 (7)
1.5 (4)
W
W
Operating & Storage Junction Temperature Range T op , T stg - 65 to +200 0 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction - to - Case
2N2369A; 2N444 9
All UA
All UB
All U
R θJC

146
125
135
117
0 C/mW
Thermal Resistance, Ambient - to - Case
2N2369A; 2N4449
All UA
All UB
All U
R θJA

325
350
437
291
0 C/mW
1) Derate linearly 3.08 mW/ 0 C above T A = +37.5 0 C 5) Derate linearly 2.86 mW/ 0 C above T C = +63.5 0 C
2) Derate linearly 6.85 mW/ 0 C above T C = +25 0 C 6) Derate linearly 2.29 mW/ 0 C above T C = +63.5 0 C
3) Derate linearly 3.44 mW/ 0 C above T A = +63.5 0 C 7) Derate linearly 8.00 mW/ 0 C above T C = +63.5 0 C
4) Derate linearly 8.55 mW/ 0 C above T C = +63.5 0 C


TO - 18* (TO - 206AA)
2N2369A


TO - 46 (TO - 206AB)
2N4449

SURFACE MOUNT
UA*

SURFACE MOUNT
UB*

SURFACE MOUNT
U*
*See appendix A for package outline


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