20MT120UF
V
CES
= 1200V
I
C
= 40A
T
C
= 25°C
• UltraFast Non Punch Through (NPT)
Technology
• Positive V
CE(ON)
Temperature Coefficient
• 10µs Short Circuit Capability
• HEXFRED
TM
Antiparallel Diodes with
UltraSoft Reverse Recovery
• Low Diode V
F
• Square RBSOA
• Aluminum Nitride DBC
• Very Low Stray Inductance Design for
High Speed Operation
• UL approved (File E78996)
Features
Absolute Maximum Ratings
"FULL-BRIDGE" IGBT MTP
V
CES
Collector-to-Emitter Breakdown Voltage 1200 V
I
C
Continuos Collector Current @ T
C
= 25°C 40 A
@ T
C
= 106°C 20
I
CM
Pulsed Collector Current 100
I
LM
Clamped Inductive Load Current 100
I
F
Diode Continuous Forward Current @ T
C
= 106°C 25
I
FM
Diode Maximum Forward Current 100
V
GE
Gate-to-Emitter Voltage ± 20 V
V
ISOL
RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500
P
D
Maximum Power Dissipation (only IGBT) @ T
C
= 25°C 240 W
@ T
C
= 100°C 96
Parameters Max Units
UltraFast NPT IGBT
• Optimized for Welding, UPS and SMPS
Applications
• Rugged with UltraFast Performance
• Benchmark Efficiency above 20KHz
• Outstanding ZVS and Hard Switching
Operation
• Low EMI, requires Less Snubbing
• Excellent Current Sharing in Parallel
Operation
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Very Low Junction-to-Case Thermal
Resistance
Benefits
MMTP
5/ I27124 rev. D 02/03
1www.irf.com