2SD0601A
器件描述：Silicon NPN epitaxial planer type
器件厂商：PANASONIC [Panasonic Semiconductor]
文件大小：38.77KB，共2页
Sponsor by e络盟器件资料摘要：
1
Publication date: August 2003 SJJ00156BED
Composite Transistors
XP02501 (XP2501)
Silicon NPN epitaxial planar type
For general amplification
■ Features
• Two elements incorporated into one package
(Base-coupled transistors)
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• 2SD0601A (2SD601A) × 2
■ Absolute Maximum Ratings T
a
= 25°C
Unit: mm
Internal Connection
Marking Symbol: 5W
123
45
Tr1 Tr2
Note) The part number in the parenthesis shows conventional part number.
■ Electrical Characteristics T
a
= 25°C ± 3°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
60 V
Collector-emitter voltage (Base open) V
CEO
50 V
Emitter-base voltage (Collector open) V
EBO
7V
Collector current I
C
100 mA
Peak collector current I
CP
200 mA
Total power dissipation P
T
150 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Ratio between 2 elements
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 10 µA, I
E
= 060V
Collector-emitter voltage (Base open) V
CEO
I
C
= 2 mA, I
B
= 05
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 µA, I
C
= 07
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 20 V, I
E
= 0 0.1 µA
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= 10 V, I
B
= 0 100 µA
Forward current transfer ratio h
FE
V
CE
= 10 V, I
C
= 2 mA 160 460
h
FE
ratio
*
h
FE(Small/
V
CE
= 10 V, I
C
= 2 mA 0.50 0.99
Large)
Collector-emitter saturation voltage V
CE(sat)
I
C
= 100 mA, I
B
= 10 mA 0.1 0.3 V
Transition frequency f
T
V
CB
= 10 V, I
E
= −2 mA, f = 200 MHz 150 MHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 3.5 pF
(Common base, input open circuited)
1: Emitter (Tr1) 4: Collector (Tr2)
2: Base 5: Collector (Tr1)
3: Emitter (Tr2)
EIAJ: SC-88A SMini5-G1 Package
2.1
±
0.1
0.9
+0.2 –0.1
0.9
±
0.1
0 to 0.1
1.25
±
0.10
1 32
0.20±0.05
(0.425)
1.3±0.1
2.0±0.1
54
(0.65) (0.65)
0.2
±
0.1
0.12
+0.05
–0.02
5˚
10˚
Publication date: August 2003 SJJ00156BED
Composite Transistors
XP02501 (XP2501)
Silicon NPN epitaxial planar type
For general amplification
■ Features
• Two elements incorporated into one package
(Base-coupled transistors)
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• 2SD0601A (2SD601A) × 2
■ Absolute Maximum Ratings T
a
= 25°C
Unit: mm
Internal Connection
Marking Symbol: 5W
123
45
Tr1 Tr2
Note) The part number in the parenthesis shows conventional part number.
■ Electrical Characteristics T
a
= 25°C ± 3°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
60 V
Collector-emitter voltage (Base open) V
CEO
50 V
Emitter-base voltage (Collector open) V
EBO
7V
Collector current I
C
100 mA
Peak collector current I
CP
200 mA
Total power dissipation P
T
150 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Ratio between 2 elements
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 10 µA, I
E
= 060V
Collector-emitter voltage (Base open) V
CEO
I
C
= 2 mA, I
B
= 05
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 µA, I
C
= 07
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 20 V, I
E
= 0 0.1 µA
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= 10 V, I
B
= 0 100 µA
Forward current transfer ratio h
FE
V
CE
= 10 V, I
C
= 2 mA 160 460
h
FE
ratio
*
h
FE(Small/
V
CE
= 10 V, I
C
= 2 mA 0.50 0.99
Large)
Collector-emitter saturation voltage V
CE(sat)
I
C
= 100 mA, I
B
= 10 mA 0.1 0.3 V
Transition frequency f
T
V
CB
= 10 V, I
E
= −2 mA, f = 200 MHz 150 MHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 3.5 pF
(Common base, input open circuited)
1: Emitter (Tr1) 4: Collector (Tr2)
2: Base 5: Collector (Tr1)
3: Emitter (Tr2)
EIAJ: SC-88A SMini5-G1 Package
2.1
±
0.1
0.9
+0.2 –0.1
0.9
±
0.1
0 to 0.1
1.25
±
0.10
1 32
0.20±0.05
(0.425)
1.3±0.1
2.0±0.1
54
(0.65) (0.65)
0.2
±
0.1
0.12
+0.05
–0.02
5˚
10˚