A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 50 mA 35 V
BV
CER
I
C
= 50 mA R
BE
= 10 Ω 60 V
BV
EBO
I
E
= 10 mA 4.0 V
I
CES
V
E
= 28 V 5 mA
h
FE
V
CE
= 5.0 V I
C
= 1.0 A 10 100 ---
C
ob
V
CB
= 28 V f = 1.0 MHz 80 pF
G
PE

IMD
3

V
CE
= 25 V I
CQ
= 3.2 A f = 225 MHz
P
REF
= 16 W Vision = -8 dB Snd. = -7 dB
Side Band = -16 dB
13.5 14.5
-55
dB
dBc

NPN SILICON RF POWER TRANSISTOR
CD2315
DESCRIPTION:
The ASI CD2315 is designed for
broadband amplifier applications in
commercial and amateur
communication equipment.

FEATURES:
• P
G
= 18 dB min. at 75 W/30 MHz
• IMD
3
= -30 dBc max. at 75 W (PEP)
• Omnigold™ Metalization System
MAXIMUM RATINGS
I
C
10 A
V
CB
60 V
V
CE
35 V
P
DISS
140 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
1.05 °C/W
PACKAGE STYLE .380 4L FLG


















1 = Collector 2 = Emitter 3 = Base
MINIMUM
inches / mm
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.980 / 24.89
inches / mm
H .160 / 4.06 .180 / 4.57
DIM
.220 / 5.59 .230 / 5.84
.105 / 2.67.085 / 2.16
I
J .240 / 6.10 .255 / 6.48
.785 / 19.94
F
B
G
.125
Ø.125 NOM.
FULL R
D
E
C
H
.112 x 45°
A
I
J
.004 / 0.10 .006 / 0.15
.280 / 7.11
.720 / 18.29 .730 / 18.54
2
2
1
3