1Motorola Small–Signal Transistors, FETs and Diodes Device Data
C0079C0110C0101 C0087C0097C0116C0116 C0065C0109C0112C0108C0105C0102C0105C0101C0114 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114C0115
PNP Silicon
MAXIMUM RATINGS
Rating Symbol BDB02C BDB02D Unit
Collector–Emitter Voltage V
CEO
–80 –100 Vdc
Collector–Base Voltage V
CES
–80 –100 Vdc
Emitter–Base Voltage V
EBO
–5.0 Vdc
Collector Current — Continuous I
C
–0.5 Adc
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
P
D
1.0
8.0
Watt
mW/°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
2.5
20
Watt
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
C0113JA
125 °C/W
Thermal Resistance, Junction to Case R
C0113JC
50 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Voltage BDB02C
(I
C
= –10 mA, I
B
= 0) BDB02D
V
(BR)CEO
–80
–100
—
—
Vdc
Collector Cutoff Current
(V
CB
= –80 V, I
E
= 0) BDB02C
(V
CB
= –100 V, I
E
= 0) BDB02D
I
CBO
—
—
–0.1
–0.1
C0109Adc
Emitter Cutoff Current (I
C
= 0, V
EB
= –5.0 V) I
EBO
— –100 nAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= –100 mA, V
CE
= –1.0 V)
(I
C
= –500 mA, V
CE
= –2.0 V)
h
FE
40
25
400
—
—
Collector–Emitter Saturation Voltage
(1)
(I
C
= –1000 mA, I
B
= –100 mA) V
CE(sat)
— –0.7 Vdc
Collector–Emitter On Voltage
(1)
(I
C
= –1000 mA, V
CE
= –1.0 V) V
BE(on)
— –1.2 Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (I
C
= –200 mA, V
CE
= –5.0 V, f = 20 MHz) f
T
50 — MHz
Output Capacitance (V
CB
= –10 V, I
E
= 0, f = 1.0 MHz) C
ob
— 30 pF
1. Pulse Test: Pulse Width C0118 300 C0109s, Duty Cycle 2.0%.
Order this document
by BDB02C/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0066C0068C0066C0048C0050C0067C0044C0068
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
1
2
3
 Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER