A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.

CHARACTERISTICS TC = 25 °C
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
V
R
I
R
= 10 µA 100 V
V
F
I
F
= 100 mA 1.0 V
τ I
F
= 50 mA I
R
= 250 mA 1300 µS
R
S
I
F
= 100 mA f = 100 MHz 2.5 Ω
C
t
V
R
= 50 V f = 1.0 MHz 0.4 pF
R
H
I
F
= 10 µA f =100 MHz 1000 Ω
R
L
I
F
= 20 mA f = 100 MHz 8.0 Ω

SILICON PIN DIODE
5082-3080

DESCRIPTION:
The ASI 5082-3080 PIN Diode is
Designed for Low Power RF Switching
and Attenuating Applications.
MAXIMUM RATINGS
I 250 mA
V 100 V
P
DISS
250 mW @ T
C
= 25 °C
T
J
-65 °C to +150 °C
T
STG
-65 °C to +150 °C
T
SOLD
260 °C for 5 sec.

PACKAGE STYLE 15