2SK3342
2002-01-25 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3342

Switching Regulator Applications DC−DC Converter, and
Motor Drive Applications


G6cG20Low drain−source ON resistance : R
DS (ON)
= 0.8 Ω (typ.)
G6cG20High forward transfer admittance : |Y
fs
| = 4.5 S (typ.)
G6cG20Low leakage current : I
DSS
= 100 µA (max) (V
DS
= 250 V)
G6cG20Enhancement−mode : V
th
= 1.5~3.5 V (V
DS
= 10 V, I
D
= 1 mA)

Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain−source voltage V
DSS
250 V
Drain−gate voltage (R
GS
= 20 kΩ) V
DGR
250 V
Gate−source voltage V
GSS
±20 V
DC (Note 1) I
D
4.5 A
Drain current
Pulse (Note 1) I
DP
18 A
Drain power dissipation (Tc = 25°C) P
D
20 W
Single pulse avalanche energy
(Note 2)
E
AS
51 mJ
Avalanche current I
AR
4.5 A
Repetitive avalanche energy (Note 3) E
AR
2.0 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
−55~150 °C

Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
th (ch−c)
6.25 °C / W
Thermal resistance, channel to
ambient
R
th (ch−a)
125 °C / W
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: V
DD
= 50 V, T
ch
= 25°C (initial), L = 4.28 mH, R
G
= 25 Ω,
I
AR
= 4.5 A
Note 3: Repetitive rating; Pulse width limited by maximum channel
temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.

Unit: mm



JEDEC ―
JEITA SC-64
TOSHIBA 2-7B1B
Weight: 0.36 g (typ.)


JEDEC ―
JEITA ―
TOSHIBA 2-7J1B
Weight: 0.36 g (typ.)