2SJ620
2002-09-11 1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L
2
-π-MOSV)
2SJ620

Switching Regulator and DC-DC Converter Applications
Motor Drive Applications


Gb7G20 4-V gate drive
Gb7G20 Low drain-source ON resistance: R
DS (ON)
= 63 mΩ (typ.)
Gb7G20 High forward transfer admittance: |Y
fs
| = 15 S (typ.)
Gb7G20 Low leakage current: I
DSS
= −100 µA (max) (V
DS
= −100 V)
Gb7G20 Enhancement-model: V
th
= −0.8 to −2.0 V (V
DS
= −10 V, I
D
= −1 mA)

Maximum Ratings (Ta G3d 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
G2d100 V
Drain-gate voltage (R
GS
G3d 20 kG57) V
DGR
G2d100 V
Gate-source voltage V
GSS
Gb120 V
DC (Note 1) I
D
G2d18
Drain current
Pulse (Note 1) I
DP
G2d72
A
Drain power dissipation (Tc G3d 25°C) P
D
125 W
Single pulse avalanche energy
(Note 2)
E
AS
937 mJ
Avalanche current I
AR
G2d18 A
Repetitive avalanche energy (Note 3) E
AR
12.5 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
G2d55 to150 °C

Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
th (ch-c)
1.0 °C/W
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: V
DD
G3d G2d50 V, T
ch
G3d 25°C (initial), L G3d 3.56 mH, R
G
G3d 25 G57,
I
AR
G3d G2d18 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with caution.

Unit: mm


JEDEC ―
JEITA SC-97
TOSHIBA 2-9F1B
Weight: 0.74 g (typ.)

Circuit Configuration

1
3
4