2SC5717
2001-11-27 1
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
2SC5717

Horizontal Deflection Output for Super High Resolution
Display, Color TV, Digital TV.
High Speed Switching Applications.


Gb7G20 High voltage: V
CBO
= 1500 V
Gb7G20 Low saturation voltage: V
CE (sat)
= 3 V (max)
Gb7G20 High speed: t
f
(2) = 0.1 µs (typ.)

Maximum Ratings (Tc G3d 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
1500 V
Collector-emitter voltage V
CEO
700 V
Emitter-base voltage V
EBO
5 V
DC I
C
21
Collector current
Pulse I
CP
42
A
Base current I
B
10.5 A
Collector power dissipation P
C
75 W
Junction temperature T
j
150 °C
Storage temperature range T
stg
G2d55~150 °C

Electrical Characteristics (Tc G3d 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
CBO
V
CB
G3d 1500 V, I
E
G3d 0 Gbe Gbe 1 mA
Emitter cut-off current I
EBO
V
EB
G3d 5 V, I
C
G3d 0 Gbe Gbe 10 G6dA
Collector-emitter breakdown voltage V
(BR) CEO
I
E
G3d 10 mA, I
B
G3d 0 700 V
h
FE
(1)

V
CE
G3d 5 V, I
C
G3d 2 A 20 Gbe 50
h
FE
(2)

V
CE
G3d 5 V, I
C
G3d 10 A 8 Gbe 17 DC current gain
h
FE
(3) V
CE
G3d 5 V, I
C
G3d 17 A 4.8 G20 8.3
Gbe
Collector-emitter saturation voltage V
CE (sat)
I
C
G3d 17 A, I
B
G3d 4.25 A Gbe Gbe 3 V
Base-emitter saturation voltage V
BE (sat)
I
C
G3d 17 A, I
B
G3d 4.25 A Gbe 1.0 1.5 V
Transition frequency f
T
V
CE
G3d 10 V, I
C
G3d 0.1 A GbeG20 2 Gbe MHz
Collector output capacitance C
ob
V
CB
G3d 10 V, I
E
G3d 0, f G3d 1 MHz GbeG20 240 GbeG20 pF
Storage time t
stg
(1) Gbe 2.5 3
Fall time t
f
(1)
I
CP
G3d 10 A, I
B1 (end)
G3d 1.4 A,
f
H
G3d 64 kHz
Gbe 0.15 0.3
Storage time t
stg
(2) G20 1.6 1.8
Switching time
Fall time t
f
(2)
I
CP
G3d 8 A, I
B1

(end)
G3d 1.1 A,
f
H
G3d 100 kHz
Gbe 0.1 0.15
G6ds

Unit: mm


JEDEC ―
JEITA ―
TOSHIBA 2-16E3A
Weight: 5.5 g (typ.)