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2SB1694

器件描述:General purpose amplification (−30V, −1A)
器件厂商:ROHM [Rohm]
厂商主页:http://www.rohm.com/
文件大小:67.94KB,共2页
Sponsor by e络盟
器件资料摘要:
2SB1694
Transistors
1/2
General purpose amplification (−30V, −1A)
2SB1694


!Application
Low frequency amplifier
Driver


!Features
1) A collector current is large.
2) Collector saturation voltage is low.
VCE(sat) ≤ −380mV
At IC = −500mA / IB = −25mA




!External dimensions (Units : mm)
Abbreviated symbol : ES
Each lead has same dimensions
ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323
(1) Emitter
(2) Base
(3) Collector
1.25
2.1
0.3
0.15
0~0.1
0.1Min.
(
3
)
0.9
0.7
0.2
0.65
(
2
)
2.01.3
(
1
)
0.65



!Absolute maximum ratings (Ta=25°C)
Parameter Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
−30
−30
−6
−1
200
150
−55~+150
−2

Unit
V
V
V
A
A
mW
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗Single pulse, PW=1ms


!Packaging specifications
2SB1694
T106
3000Type
Package
Code
Basic ordering unit (pieces)
Taping







!Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
VCB=−10V, IE=0A, f=1MHz
fT − 320 − MHz VCE=−2V, IE=100mA, f=100MHz
BVCBO −30 −−V IC=−10µA
BVCEO −30 −−V IC=−1mA
BVEBO −6 −−V IE=−10µA
ICBO −−−100 nA VCB=−30V
IEBO −−−100 nA VEB=−30V
VCE(sat) −−180 −380 mV IC=−500mA, IB=−25mA
hFE 270 − 680 − VCE=−2V, IC=−100mA
Cob − 7 − pF
∗1
∗1
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
∗1 Pulsed