TECHNICAL DATA

PNP HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/433
Devices Qualified Level
2N4399 2N5745




JANTX
JANTXV

MAXIMUM RATINGS
Ratings Symbol 2N4399 2N5745 Unit
Collector - Emitter Voltage V CEO 60 80 Vdc
Collector - Base Voltage V CBO 60 80 Vdc
Emitter - Base Voltage V EBO 5.0 Vdc
Base Current I B 7.5 Adc
Collector Current I C 30 20 Adc
Total Power Dissipation @ T A =+ 25 0 C (1)
@ T C = +100 0 C (2)
P T 5.0
115
W
W
Operating & Storage Junction Temperature Range T J , T stg - 55 to +200 0 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction - to - Case
Junction - to - Ambient
R θJC
R θJA
3

0.875
35
0 C/W
1) Derate linearly @ 28.57 mW/ 0 C f or T A > +25 0 C
2) Derate linearly @ 1.15 W/ 0 C for T C > +100 0 C

*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltag e
I C = 200 mAdc 2N4399
2N5745
V (BR) CEO

60
80

Vdc
Collector - Emitter Cutoff Current
V CE = 60 Vdc 2N4399
V CE = 80 Vdc 2N5745
I CEO

100
100
µAdc
Collector - Emitter Cutoff Current
V CE = 60 Vdc, V BE = 1.5 Vdc 2N4399
V CE = 80 Vdc, V BE = 1.5 Vdc 2N5745
I CEX

5.0
5.0
µAdc
Emitter - Base Cutoff Current
V EB = 5.0 Vdc I EBO 5.0 µAdc

6 Lake Street, Lawrence, MA 01841
1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803
120101
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TO - 3*
(TO - 204AA)