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厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

1N5812

器件描述:ULTRA FAST RECOVERY RECTIFIERS
器件厂商:MICROSEMI [Microsemi Corporation]
文件大小:114.32KB,共2页
Sponsor by e络盟
器件资料摘要:
TECHNICAL DATA

FAST RECOVERY POWER RECTIFIER
Qualified per MIL-PRF-19500/478
Devices Qualified Level
1N5812
1N5812R
1N5814
1N5814R
1N5815
1N5815R
1N5816
1N5816R




JAN
JANTX
JANTXV

MAXIMUM RATINGS
Ratings Symbol 1N5812 1N5812R 1N5814 1N5814R 1N5816 1N5816R Unit
Reverse Voltage V R 50 100 150 Vdc
Working Peak Reverse Voltage V RWM 50 100 150 Vpk
Average Forward Current T C = +100 0 C (1) I O 20 Adc
Forward Current Surge Peak T C = +100 0 C
t p = 8.3 ms I FSM 400 Adc
Reverse Recovery Tim e t rr 35 ηs
Operating & Storage Junction Temperature T J , T stg - 65 to +175 0 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction - to - Case R θJC 1.5 0 C/W
1) Derate linearly 250 mA/ 0 C from +100 0 C to +150 0 C, & 300 mA/ 0 C above +150 0 C


*See appendix A for
ELECTRICAL CHARACTERISTICS package outline
Characteristics Symbol Min. Max. Unit
Thermal Impedance
I H ≥ rated I O ; t H ≤ 250ms; 10 mA ≤ I M ≤ 100 mA; t MD = 250 µs (max) Z θJX 1.35
0 C/W
Forward Voltage
t p ≤ 8.3 ms, duty cycle ≤ 2.0% pulsed
I F = 10 A (pk)
I F = 20 A (pk)
V F1
V F2


0.860
0.950
Vdc
Vpk
Reverse Current
V R = Rated V R (See 1.3 of MIL - PRF - 19500/478) I R 10 µAdc
Breakdown Voltage
I R = 100 µAdc 1N5812, R
I R = 100 µAdc 1N5814, R
I R = 1 00 µAdc 1N5816, R
V (BR) 60 110
160
Vdc
Junction Capacitance
V R = 10 Vdc, V SIG = 50 mVdc (p - p) max, f = 1.0 MHz C J 300 pF
Forward Recovery Voltage
t p ≥ 20 ηs, t r = 8.0 ηs; I F = 1,000 mA V FR 2.2 V(pk)
Forward Recovery Time
I F = 1,000 mA t rr 1 5 ηs
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DO - 203AA
(DO - 4)