BAT42W, BAT43W
Vishay Semiconductors
formerly General Semiconductor
Document Number 88138 www.vishay.com
5-Feb-02 1
Schottky Diodes
.022 (0.55)
.
112 (2.
85)
.
152 (3.
85)
.067 (1.70)
.
053 (1.
35)
ma
x
.

.010 (0.25)
min.
Cathode Band
.
006 (0.
15)
ma
x
.

Top View
.
140 (3.
55)
.
100 (2.
55)
.055 (1.40)
.004 (0.1)
max.
Dimensions in inches
and (millimeters)
Mechanical Data
Case: SOD-123 Plastic Package
Weight: approx. 0.01g
Marking Codes: BAT42W = L2
BAT43W = L3
Packaging Codes/Options:
D3/10K per 13” reel (8mm tape), 30K/box
D4/3K per 7” reel (8mm tape), 30K/box
SOD-123
0.094 (2.40)
0.055 (1.40)
0.055 (1.
40)
Features
• For general purpose applications
• These diodes feature very low turn-on voltage and
fast switching. These devices are protected by a PN
junction guard ring against excessive voltage, such
as electrostatic discharges.
• These diodes are also available in the DO-35
case with the type designations BAT42 to BAT43
and in the MiniMELF case with the type
designations LL42 to LL43.
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameters Symbol Value Unit
Repetitive Peak Reverse Voltage VRRM 30 V
Forward Continuous Current at Tamb = 25°CIF 200 mA
Repetitve Peak Forward Current
IFRM 500 mA
at tp < 1s, δ < 0.5, Tamb = 25°C
Surge Forward Current at tp < 10 ms, Tamb = 25°CIFSM 4
(1)
A
Power Dissipation
(1)
at Tamb = 65°CPtot 200
(1)
mW
Thermal Resistance Junction to Ambient Air RΘJA 300
(1)
°C/W
Junction Temperature Tj 125 °C
Ambient Operating Temperature Range Tamb –55 to +125 °C
Storage Temperature Range TS –55 to +150 °C
Note: (1) Valid provided that electrodes are kept at ambient temperature
Mounting Pad Layout