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®
AS4C4M4F0
AS4C4M4F1
5V 4M×4 CMOS DRAM (Fast Page mode)
4/11/01; v.0.9 Alliance Semiconductor P. 1 of 18
Features
• Organization: 4,194,304 words × 4 bits
High speed
- 50/60 ns RAS access time
- 25/30 ns column address access time
- 12/15 ns CAS access time
Low power consumption
- Active: 908 mW max
- Standby: 5.5 mW max, CMOS I/O
Fast page mode
Refresh
- 4096 refresh cycles, 64 ms refresh interval for
AS4C4M4F0
- 2048 refresh cycles, 32 ms refresh interval for
AS4C4M4F1
-RAS-only or CAS-before-RAS refresh or self-refresh
TTL-compatible, three-state I/O
JEDEC standard package
- 300 mil, 24/26-pin SOJ
- 300 mil, 24/26-pin TSOP
Latch-up current ≥ 200 mA
ESD protection ≥ 2000 mV
Industrial and commercial temperature available
Pin arrangement
A8
A7
A6
A5
A4
A10
A0
A1
A2
A3
V
CC
GND
GND
I/O3
I/O2
CAS
OE
V
CC
I/O0
I/O1
WE
RAS
1
2
3
4
5
26
25
24
23
22
*NC/A11 A9621
8
9
10
11
18
17
16
15
14
12
SOJ
AS
4C
4M
4
F
0
A8
A7
A6
A5
A4
A10
A0
A1
A2
A3
V
CC
GND
GND
I/O3
I/O2
CAS
OE
V
CC
I/O0
I/O1
WE
RAS
1
2
3
4
5
*NC/A11 A96
TSOP
AS
4C
4M
4
F
0
*NC on 2K refresh version; A11 on 4K refresh version
13
19
Pin designation
Pin(s) Description
A0 to A11 Address inputs
RAS Row address strobe
CAS Column address strobe
WE Write enable
I/O0 to I/O3 Input/output
OE Output enable
V
CC
Power
GND Ground
Selection guide
Symbol
AS4C4M4F0-50
AS4C4M4F1-50
AS4C4M4F0-60
AS4C4M4F1-60 Unit
Maximum RAS access time t
RAC
50 60 ns
Maximum column address access time t
CAA
25 30 ns
Maximum CAS access time t
CAC
12 15 ns
Maximum output enable (OE) access time t
OEA
13 15 ns
Minimum read or write cycle time t
RC
85 100 ns
Minimum fast page mode cycle time t
PC
25 30 ns
Maximum operating current I
CC1
135 120 mA
Maximum CMOS standby current I
CC5
1.0 1.0 mA
8
9
10
11
12
13
18
17
16
15
14
19
26
25
24
23
22
21