AT29LV1024
1 Megabit
(64K x 16)
3-volt Only
CMOS Flash
Memory
Features
•
Single Voltage, Range 3V to 3.6V Supply
•
3-Volt-Only Read and Write Operation
•
Software Protected Programming
•
Fast Read Access Time - 150 ns
•
Low Power Dissipation
15 mA Active Current
50 µA CMOS Standby Current
•
Sector Program Operation
Single Cycle Reprogram (Erase and Program)
512 Sectors (128 words/sector)
Internal Address and Data Latches for 128 Words
•
Fast Sector Program Cycle Time - 20 ms
•
Internal Program Control and Timer
•
DATA Polling for End of Program Detection
•
Typical Endurance > 10,000 Cycles
•
CMOS and TTL Compatible Inputs and Outputs
•
Commercial and Industrial Temperature Ranges
Description
The AT29LV1024 is a 3-volt-only in-system Flash programmable and erasable read
only memory (PEROM). Its 1 megabit of memory is organized as 65,536 words by 16
bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device
offers access times to 150 ns with power dissipation of just 54 mW. When the device
is deselected, the CMOS standby current is less than 50 µA. The device endurance
is such that any sector can typically be written to in excess of 10,000 times.
To allow for simple in-system reprogrammability, the AT29LV1024 does not require
high input voltages for programming. Three-volt-only commands determine the opera-
tion of the device. Reading data out of the device is similar to reading from an
(continued)
TSOP Top View
Type 1
PLCC Top View
Pin Configurations
Pin Name Function
A0 - A15 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O15
Data
Inputs/Outputs
NC No Connect
DC Don’t Connect
0564A
AT29LV1024
4-63