A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25
O
C
NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
V
B
I
R
= 10 µA 80 V
C
T
V
R
= 6.0 V f = 1.0 MHz 10.8 13.2 pF
R
S
V
R
= 6.0 V f = 50 MHz 0.25 Ohms
F
OUT
1000 MHz
P
OUT
25.1 W
F
IN
500 MHz
P
IN
37.0 W
SILICON VARACTOR DIODE
MV1807J1
DESCRIPTION:
The ASI MV1807J1 is a Diffused
Epitaxial Varactor Diode Designed for
Multiplier Applications.
MAXIMUM RATINGS
I 100 mA
V 80 V
P
DISS
21 W @ T
C
= 25
O
C
T
J
-65
O
C to +150
O
C
T
STG
-65
O
C to +175
O
C
θ
JC
6.0
O
C/W
PACKAGE STYLE DO-4
Cathode to case