2SA2092
Transistors
1/3
Parameter
V
V
V
A
mW
∗1 Pw=10ms
∗2 Each terminal mounted on a recommended land
∗2
∗1
°C
A
°C
VCBO
VCEO
IC
PC
Tj
VEBO
ICP
Tstg
Symbol
−60
−60
−6
−1
−2
500
150
−55 to +150
Limits Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
PULSE
Power dissipation
Junction temperature
Range of storage temperature
-1A / -60V Bipolar transistor
2SA2092

zApplications
High-speed switching, low frequency amplification

zFeature
1) High speed switching. (tf : Typ. : 30ns at IC = -1A)
2) Low saturation voltage.
(Typ. :
−
200mV at IC =
−
500mA, IB =
−
50mA)
3) Strong discharge resistance for inductive load and
capacitance load.
4) Low switching noise.

zStructure
PNP epitaxial planar silicon transistor

zExternal dimensions (Unit : mm)
Each lead has same dimensions
Abbreviated symbol : VN
TSMT3
(1) Base
(2) Emitter
(3) Collector
0~0.1
0.16
0.85
1.0MAX
0.7
0.3
~
0.6(2)(1)
(3)
2.9
2.8
1.9
1.6
0.950.95
0.4

zAbsolute maximum ratings (Ta=25°C) zPackaging specifications
Taping
2SA2092
Part No.
TL
3000
Packaging type
TSMT3Package
Basic ordering unit (pieces)
Code


zhFE rank
Q
120-270




zElectrical characteristics (Ta=25°C)
Parameter Symbol
BVEBO
ICBO
IEBO
VCE(sat)
fT
hFE
Cob
ton
Min.
−6
−
−
−
120
−
−
−
−
−
300
−−
15
30
−
−1.0
−1.0
− −200 −500
270
−
−
−
IE= −100µA
VCE= −2V, IC= −100mA
VCB= −40V
VEB= −4V
IC= −500mA, IB= −50mA
IC= −1A,
IB1= −100mA
IB2=100mA
VCC

−25V
VCE= −10V, IE=100mA, f=10MHz
VCB= −10V, IE=0, f=1MHz
V
µA
µA
MHz
mV
pF
ns
tstg − 100 − ns
tf − 30 −
ns
Typ. Max. Unit Conditions
BVCEO
−60 −−V IC= −100µA
Collector-emitter breakdown voltage
Collector cut-off current
DC current gain
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
Emitter cut-off current
Collector-emitter saturation voltage
BVCBO
−60 −−
IC= −1mA
V
Collector-base breakdown voltage
Emitter-base breakdown voltage
∗2
∗3
∗1
∗1 Pulse measurement
∗2 See switching test circuit
∗3 hFE rank
∼
−