AAT9512
28V N-Channel Power MOSFET
Preliminary Information
9512.2003.04.0.61 1
General Description
The AAT9512 is a low threshold MOSFET designed
for the battery, cell phone, and PDA markets. Using
AnalogicTech™'s ultra high density MOSFET
process and space saving small outline J-lead pack-
age, performance superior to that normally found in
a TSOP-6 footprint has been squeezed into the foot-
print of a SC70 package.
Applications
• Battery Packs
• Cellular & Cordless Telephones
• Battery-powered portable equipment
Features
•V
DS(MAX)
= 28V
•I
D(MAX)
1
= 4.5A @ 25°C
• Low R
DS(ON)
:
• 48 mΩ @ V
GS
= 4.5V
• 76 mΩ @ V
GS
= 2.5V
SC70JW-8 Package
DDDD
SSSG
Top View
1234
8765
Absolute Maximum Ratings (T
A
=25°C unless otherwise noted)
Thermal Characteristics
Symbol Description Value Units
R
θJA
Typical Junction-to-Ambient steady state
1
102 °C/W
R
θJA2
Maximum Junction-to-Ambient t<5 seconds
1
78 °C/W
R
θJF
Typical Junction-to-Foot
1
35 °C/W
Symbol Description Value Units
V
DS
Drain-Source Voltage 28
V
V
GS
Gate-Source Voltage ±12
I
D
Continuous Drain Current @ T
J
=150 C
1
T
A
= 25°C ±4.5
T
A
= 70°C ±3.6
A
I
DM
Pulsed Drain Current
2
±20
I
S
Continuous Source Current (Source-Drain Diode)
1
1.2
P
D
Maximum Power Dissipation
1
T
A
= 25°C 1.6
W
T
A
= 70°C 1.0
T
J
, T
STG
Operating Junction and Storage Temperature Range -55 to 150 °C