1N4003ST
SILICON RECTIFIER DIODE
PRV : 200 Volts
Io : 1.0 Ampere
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.34 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specifie.
Single phase, half wave, 60 Hz, resistive or inductive load
For capacitive load, derate current by 20%
SYMBOL VALUE UNIT
Maximum Repetitive Peak Reverse Voltage VRRM 200 Volts
Maximum RMS Voltage VRMS 140 Volts
Maximum DC Blocking Voltage VDC 200 Volts
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 75 °C IF(AV) 1.0 Amp.
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method) IFSM 30 Amps.
Maximum Forward Voltage at IF = 1.0 Amp. VF 1.1 Volts
Maximum DC Reverse Current
at rated DC Blocking Voltage IR 5.0 μA
Typical Junction Capacitance (Note1) CJ 15 pF
Typical Thermal Resistance (Note2)
RθJA
26 °C/W
Junction Temperature Range TJ - 65 to + 175 °C
Storage Temperature Range TSTG - 65 to + 175 °C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
Page 1 of 2 Rev. 02 : March 31, 2005
RATING
DO - 41
Dimensions in inches and ( millimeters )
1.00 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)