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11DF3

器件描述:ULTRA FAST RECTIFIER DIODES
器件厂商:EIC [EIC discrete Semiconductors]
厂商主页:http://www.eicsemi.com
文件大小:93.81KB,共2页
Sponsor by e络盟
器件资料摘要:
11DF3 - 11DF4 ULTRA FAST
RECTIFIER DIODES
PRV : 300 - 400 Volts
Io : 1.0 Ampere
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Superfast recovery time
* Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL 11DF3 11DF4 UNIT
Maximum Recurrent Peak Reverse Voltage VRRM 300 400 V
Maximum RMS Voltage VRMS 210 280 V
Maximum DC Blocking Voltage VDC 300 400 V
Maximum Average Forward Current Ta = 57 °C IF(AV) 1.0 A
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave
Superimposed on rated load (JEDEC Method)
Maximum Peak Forward Voltage at IF = 1.0 A VF 1.25 V
Maximum DC Reverse Current at VRRM IR 10 µA
Maximum Reverse Recovery Time ( Note 1 ) Trr 35 ns
Junction Temperature Range TJ - 65 to + 150 °C
Storage Temperature Range TSTG - 65 to + 150 °C
Note:
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
Page 1 of 2 Rev. 02 : March 25, 2005
RATING
IFSM 30 A
DO - 41
Dimensions in inches and ( millimeters )
1.00 (25.4)
MIN.0.107 (2.7)0.080 (2.0)
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
MIN.0.034 (0.86)0.028 (0.71)