NPN HIGH VOLTAGE HIGH SPEED SILICON POWER TRANSISTOR BUF508A
TO-220FP Fully Isolated
Plastic Package
Applications
High voltage, high - speed switching transistor in TO - 220FP package envelope intended
for use in horizontal deflection of colour television circuits.
ABSOLUTE MAXIMUM RATINGS.
DESCRIPTION SYMBOL VALUE UNIT
Collector Emitter Voltage Peak Value; VBE=O VCESM 1500 V
Collector Emitter Voltage V
CEO
700 V
Collector Current (DC) I
C
8.0 A
Collector Current (Peak) I
CM
15 A
Base Current (DC) I
B
4.0 A
Base Current (Peak) I
BM
6.0 A
Reverse Base Current - IB(AV) 100 mA
(DC or average over any 20ms period)
Reverse Base Current *(Peak Value) I
BM
5.0 A
Power Dissipation upto Tmb=25ºC Ptot 60 W
Operating & Storage Junction T
j, Tstg
-65 to +150 ºC
Temperature Range
*Turn off current
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT
Collector Cut off Current ** I
CES
VCE=VCESM max, VBE=0 - 1.0 mA
Tj=125ºC
VCE=VCESM max, VBE=0 - 2.0 mA
Emitter Cut off Current I
EBO
V
EB
=6V,I
C
=0 -10
Collector Emitter (sus) Voltage V
CEO (sus)
I
C
=100mA, I
B
=0, L=25mH 700 - V
Collector Emitter Saturation Voltage V
CE (Sat)
I
C
=4.5A, I
B
=2A - 1.0 V
Base Emitter Saturation Voltage VBE(Sat) I
C
=4.5A, I
B
=2A - 1.3 V
DYNAMIC CHARACTERISTISC
Transition Frequency ft IC=0.1A, VCE=5V, f=5MHz TYP 7.0 MHz
Collector Capacitance Cc IE=ie=0, VCB=10V, f=1MHz TYP 125 pF
**Measured with half - sinewave voltage (curve tracer)
Q
Continental Device India Limited Data Sheet Page 1 of 3
Continental Device India Limited
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