NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF422
(BPL)
TO-92
BCE
Designed for High Voltage Video Amplifier in Television Receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C )
DESCRIPTION SYMBOL VALUE UNITS
Collector -Base Voltage VCBO 250 V
Collector -Emitter Voltage VCEO 250 V
Emitter -Base Voltage VEBO 5.0 V
Collector Current Continuous IC 500 mA
Power Dissipation@ Ta=25 deg C PD 900 mW
Derate Above 25 deg C 7.2 mW/deg C
Power Dissipation@ Tc=25 deg C PD 2.75 W
Derate Above 25 deg C 22 mW/deg C
Operating & Storage Junction Tj, Tstg -55 to +150 deg C
Temperature Range
THERMAL RESISTANCE
From Junction to Case Rth(j-c) 45 deg C/W
From Junction to Ambient Rth(j-a) 156 deg C/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION UNITS
min max
Collector -Emitter Voltage VCEO IC=1.0mA,IB=0 250 - V
Collector -Base Voltage VCBO IC=100uA.IE=0 250 - V
Emitter-Base Voltage VEBO IE=100uA, IC=0 5.0 - V
Collector-Cut off Current ICBO VCB=200V, IE=0 - 10 nA
Emitter-Cut off Current IEBO VEB=5.0V,IC=0 100 nA
Base Emitter (Sat) Voltage VBE(Sat)* IC=20mA,IB=2mA - 2 V
Collector Emitter (Sat) Voltage VCE(Sat) * IC=20mA, IB=2mA - 0.5 V
DC Current Gain hFE* IC=25mA, VCE=20V 60 120
DYNAMIC CHARACTERISTICS
Transistors Frequency ft IC=10mA,VCE=10V 60 - MHz
f=50MHz
Feedback Capacitance Cre VCB=30V, f=1MHz - 1.6 pF
*Pulse Test : Pulse Width =300us, Duty Cycle=2%
VALUE
Continental Device India Limited Data Sheet Page 1 of 3
Continental Device India Limited
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