NPN SILICON PLANAR TRANSISTOR BF370R
TO-92
BEC
Low Level Amplifier Transistor.
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION VALUE UNIT
Collector -Base Voltage VCBO 40 V
Collector -Emitter Voltage VCEO 15 V
Emitter Base Voltage VEBO 4.5 V
Collector Current (Continuous) IC 100 mA
Power Dissipation @ Ta=25 deg C PD 500 mW
Derate Above 25 deg C 4.0 mW/deg C
Operating And Storage Junction Tj, Tstg -55 to +150 deg C
Temperature Range
Lead Temperature for Soldering 1/16" TL 260 deg C
from Body for 10 Seconds.
Thermal Resistance
Junction to Case Rth (j-c) 83.3 deg C/W
Junction to Ambient Rth (j-a) 200 deg C/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT
Collector -Base Voltage VCBO IC=100uA, IE=0 40 - - V
Collector -Emitter Voltage VCEO IC=100uA, IB=0 15 - - V
Emitter Base Voltage VEBO IE=100uA, IC=0 4.5 - - V
Collector Cut off Current ICBO VCB=20V, IE=0 - - 400 nA
Ta=125 deg C
VCB=15V, IE=0 - - 30 uA
Emitter Cut off Current IEBO VEB=2V, IC=0 - - 100 nA
DC Current Gain hFE IC=10mA,VCE=1V 40 - -
DYNAMIC CHARACTERISTICS
Transistors frequency ft IC=10mA,VCE=10V 500 - - MHz
IC=40mA,VCE=10V 490 - MHz
Collector Capacitance Cc VCB=10V, IE=0, f=1MHz pF
Emitter Capacitance Ce VEB=1V, IC= Ic=0, f=1MHz - - 4.5 pF
Feedback Capacitance Cre IC=0, VCE=10V, f=1MHz pF
Interference Voltage for K=1% GV V(int) RMS mV
Typ 2.2
Typ 1.6
Typ 120
Continental Device India Limited Data Sheet Page 1 of 3
Continental Device India Limited
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