NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS BCX38A
BCX38B
BCX38C
TO-92
Plastic Package
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL UNITS
Collector Emitter Voltage VCEO V
Collector Base Voltage VCBO V
Emitter Base Voltage VEBO V
Peak Pulse Current ICM A
Collector Current Continuous IC mA
Power Dissipation @ Ta=25ºC PD mW
Operating and Storage Junction
Temperature Range Tj, Tstg ºC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL MIN MAX UNITS
Collector Emitter Sustaining Voltage VCEO (sus) 60 V
Collector Base Voltage VCBO 80 V
Emitter Base Voltage VEBO 10 V
Collector Cut off Current ICBO 100 nA
Emitter Cut off Current IEBO 100 nA
Collector Emitter Saturation Voltage *VCE(sat) 1.25 V
Base Emitter On Voltage *VBE(on) 1.80 V
DC Current Gain *hFE
500
1000
2000
4000
5000
10000
*Pulsed Conditions: Pulse Width = 300ms, Duty Cycle <2%
VALUE
80
10
IC=10µA, IE=0
- 55 to +200
TEST CONDITION
IC=10mA, IB=0
2
60
IE=10µA, IC=0
VCB=60V, IE = 0
800
625
VEB=8V, IC = 0
IC=100mA, VCE=5V
IC=800mA, IB=8mA
IC=800mA, VCE=5V
BCX38A
IC=500mA, VCE=5V
IC=100mA, VCE=5V
IC=500mA, VCE=5V
BCX38B
IC=500mA, VCE=5V
BCX38C
IC=100mA, VCE=5V
E B C
Continental Device India Limited Data Sheet Page 1 of 3
Continental Device India Limited
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