Data Sheet 1 05.99

SIPMOS Power Transistor
Product Summary
Drain source voltage 55
V
DS
V
Drain-Source on-state resistance
Ω
0.008
R
DS(on)
I
D
Continuous drain current 80 A
Features
• N channel
• Enhancement mode
• Avalanche rated
• dv/dt rated
• 175˚C operating temperature
Pin 1 Pin 2 Pin 3
G D S
PackagingType Package Ordering Code
BUZ111S TubeP-TO220-3-1 Q67040-S4003-A2
BUZ111S E3045A Tape and ReelQ67040-S4003-A6P-TO263-3-2
TubeBUZ111S E3045 P-TO263-3-2 Q67040-S4003-A5
Maximum Ratings, at T
j
= 25 ˚C, unless otherwise specified
Parameter Symbol UnitValue
Continuous drain current
T
C
= 25 ˚C,
1)

T
C
= 100 ˚C

80
80
I
D
A
Pulsed drain current
T
C
= 25 ˚C
IDpulse
320
Avalanche energy, single pulse
I
D
= 80 A, V
DD
= 25 V, R
GS
= 25 Ω
mJ
E
AS
700
Avalanche energy, periodic limited by T
jmax
30
E
AR
Reverse diode dv/dt
I
S
= 80 A, V
DS
= 40 V, di/dt = 200 A/µs,
T
jmax
= 175 ˚C
dv/dt
6 kV/µs
Gate source voltage
V
GS
±20
V
Power dissipation
T
C
= 25 ˚C
P
tot
300 W
Operating and storage temperature
T
j
, T
stg
˚C-55... +175
55/175/56IEC climatic category; DIN IEC 68-1
BUZ 111S