MAXIMUM RATINGS (T
A
=25°C)
SYMBOL UNITS
Collector-Emitter Voltage V
CEO
32 V
Collector-Base Voltage V
CBO
32 V
Emitter-Base Voltage V
EBO
5.0
V
Collector Current I
C
100 mA
Power Dissipation P
D
350 mW
Operating and Storage
Junction Temperature T
J
,T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
357 °C/W
ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
CES
V
CE
=32V 20 nA
I
CES
V
CE
=32V, T
A
=150°C 20 µA
BV
CEO
I
C
=2.0mA 32 V
BV
EBO
I
E
=1.0µA 5.0 V
V
CE(SAT)
I
C
=10mA, I
B
=250µA 0.25 V
V
CE(SAT)
I
C
=50mA, I
B
=1.25mA 0.55 V
V
BE(SAT)
I
C
=10mA, I
B
=250µA 0.60 0.85 V
V
BE(SAT)
I
C
=50mA, I
B
=1.25mA 0.68 1.05 V
V
BE(ON)
V
CE
=5.0V, I
C
=2.0mA 0.60 0.75 V
C
ob
V
CB
=10V, I
C
=0, f=1.0MHz 6.0 pF
NF V
CE
=5.0V, I
C
=0.2mA, R
S
=2.0kΩ, f=1.0kHz, BW=200Hz 6.0 dB
t
on
V
CC
=10V, I
C
=10mA, R
L
=990Ω, I
B1
=I
B2
=1.0mA 150 ns
t
on
V
CC
=10V, I
C
=10mA, R
L
=990Ω, I
B1
=I
B2
=1.0mA 800 ns
BCW61B BCW61C BCW61D
MIN MAX MIN MAX MIN MAX
h
FE
V
CE
=5.0V, I
C
=10µA 30 40 100
h
FE
V
CE
=5.0V, I
C
=2.0mA 140 310 250 460 380 630
h
FE
V
CE
=1.0V, I
C
=50mA 80 100 100
h
fe
V
CE
=5.0V, I
C
=2.0mA, f=1.0kHz 175 350 250 500 350 700
BCW61B
BCW61C
BCW61D
SURFACE MOUNT
PNP SILICON TRANSISTOR
SOT-23 CASE
Central
Semiconductor Corp.
TM
R1 (20-February 2003)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCW61B
Series types are PNP Silicon Transistors
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for low level, low noise applications.
MARKING CODES: BCW61B : BB
BCW61C : BC
BCW61D : BD