2SK3579-01MR
器件资料摘要：
1
TO-220F
Item Symbol Ratings Unit
Drain-source voltage VDS 150
VDSX *5 130
Continuous drain current ID ±23
Pulsed drain current ID(puls] ±96
Gate-source voltage VGS ±20
Repetitive or non-repetitive IAR *2 23
Maximum Avalanche Energy EAS *1 242
Maximum Drain-Source dV/dt dVDS/dt *4 20
Peak Diode Recovery dV/dt dV/dt *3 5
Max. power dissipation PD Ta=25
°C
2.1
Tc=25
°C
40
Operating and storage Tch +150
temperature range Tstg
Isolation Voltage VISO *6 2
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3579-01MR
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS
VDS=150V VGS=0V
VDS=120V VGS=0V
VGS=±20V
ID=11.5A
ID=11.5A VDS=25V
VCC=48V ID=11.5A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
nA
mΩ
S
pF
nC
Ω
%/°C
A
V
µs
µC
ns
Min. Typ. Max. Units
Thermal resistance
Rth(ch-c) channel to case
Rth(ch-a) channel to ambient
3.125
58.0
°C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
Rg
∆Rg/∆Τch
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Internal Resistance
(Tep.Confficient)
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=250
µ
A VGS=0V
ID= 250
µ
A VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=75V
VGS=0V
f=1MHz
VCC=48V
ID=23A
VGS=10V
L=100
µ
H Tch=25°C
IF=23A VGS=0V Tch=25°C
IF=23A VGS=0V
-di/dt=100A/µs
Tch=25°C
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
kVrms
150
1.0 2.5
25
250
10 100
65 90
12 24
1470 2200
190 285
18 27
24 36
23 35
300 450
45 68
48 72
69
12 18
23.3 39 54.4
0.12
23
1.10 1.65
0.13
0.6
-55 to +150
Outline Drawings
*1 L=0.67mH, Vcc=48V *2 Tch=150°C
<
*3 IF=-ID, -di/dt=50A/µs, Vcc=BVDSS, Tch=150°C
< <<
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
=
<
VGS=10V
*4 VDS 250V *5 VGS=-20V *6 t=60sec f=60Hz
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
TO-220F
Item Symbol Ratings Unit
Drain-source voltage VDS 150
VDSX *5 130
Continuous drain current ID ±23
Pulsed drain current ID(puls] ±96
Gate-source voltage VGS ±20
Repetitive or non-repetitive IAR *2 23
Maximum Avalanche Energy EAS *1 242
Maximum Drain-Source dV/dt dVDS/dt *4 20
Peak Diode Recovery dV/dt dV/dt *3 5
Max. power dissipation PD Ta=25
°C
2.1
Tc=25
°C
40
Operating and storage Tch +150
temperature range Tstg
Isolation Voltage VISO *6 2
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3579-01MR
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS
VDS=150V VGS=0V
VDS=120V VGS=0V
VGS=±20V
ID=11.5A
ID=11.5A VDS=25V
VCC=48V ID=11.5A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
nA
mΩ
S
pF
nC
Ω
%/°C
A
V
µs
µC
ns
Min. Typ. Max. Units
Thermal resistance
Rth(ch-c) channel to case
Rth(ch-a) channel to ambient
3.125
58.0
°C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
Rg
∆Rg/∆Τch
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Internal Resistance
(Tep.Confficient)
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=250
µ
A VGS=0V
ID= 250
µ
A VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=75V
VGS=0V
f=1MHz
VCC=48V
ID=23A
VGS=10V
L=100
µ
H Tch=25°C
IF=23A VGS=0V Tch=25°C
IF=23A VGS=0V
-di/dt=100A/µs
Tch=25°C
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
kVrms
150
1.0 2.5
25
250
10 100
65 90
12 24
1470 2200
190 285
18 27
24 36
23 35
300 450
45 68
48 72
69
12 18
23.3 39 54.4
0.12
23
1.10 1.65
0.13
0.6
-55 to +150
Outline Drawings
*1 L=0.67mH, Vcc=48V *2 Tch=150°C
<
*3 IF=-ID, -di/dt=50A/µs, Vcc=BVDSS, Tch=150°C
< <<
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
=
<
VGS=10V
*4 VDS 250V *5 VGS=-20V *6 t=60sec f=60Hz
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof