KSD-T0C035-001 1
2N5551N
NPN Silicon Transistor




Descriptions
• General purpose amplifier
• High voltage application

Features
• High collector breakdown voltage : V
CBO
= 180V, V
CEO
= 160V
• Low collector saturation voltage : V
CE(sat)
=0.5V(MAX.)
• Complementary pair with 2N5401N

Ordering Information
Type NO. Marking Package Code
2N5551N 2N5551 TO-92N

Outline Dimensions unit : mm

























Semiconductor
PIN Connections
1. Emitter
2. Base
3. Collector
3
.
0
9
~
3
.
2
9
0.40 Max.
1.27 Typ.
4
.
2
0
~
4
.
4
0
0.52 Max.
2.25 Max.
1
3
.
5
0
~
1
4
.
5
0
4.20~4.40
2
.
1
4

T
y
p
.
0.90 Max.
3.55 Typ
2 31