©2000 Fairchild Semiconductor International Rev. A, February 2000
BD135/
137/
139
1
TO-126
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C
=25°C unless otherwise noted
Electrical Characteristics T
C
=25°C unless otherwise noted
h
FE
Classification
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage : BD135
: BD137
: BD139
45
60
80
V
V
V
V
CEO
Collector-Emitter Voltage : BD135
: BD137
: BD139
45
60
80
V
V
V

V
EBO
Emitter-Base Voltage 5 V

I
C
Collector Current (DC) 1.5 A

I
CP
Collector Current (Pulse) 3.0 A

I
B
Base Current 0.5 A

P
C
Collector Dissipation (T
C
=25°C) 12.5 W
P
C
Collector Dissipation (T
a
=25°C) 1.25 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
V
CEO
(sus) Collector-Emitter Sustaining Voltage
: BD135
: BD137
: BD139
I
C
= 30mA, I
B
= 0

45
60
80
V
V
V
I
CBO
Collector Cut-off Current V
CB
= 30V, I
E
= 0 0.1 µA

I
EBO
Emitter Cut-off Current V
EB
= 5V, I
C
= 0 10 µA

h
FE1
h
FE2

h
FE3
DC Current Gain : ALL DEVICE
: ALL DEVICE
: BD135
: BD137, BD139
V
CE
= 2V, I
C
= 5mA
V
CE
= 2V, I
C
= 0.5A
V
CE
= 2V, I
C
= 150mA
25
25
40
40
250
160
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 500mA, I
B
= 50mA 0.5 V
V
BE
(on) Base-Emitter ON Voltage V
CE
= 2V, I
C
= 0.5A 1 V
Classification 6 10 16
h
FE3
40 ~ 100 63 ~ 160 100 ~ 250
BD135/137/139
Medium Power Linear and Switching
Applications
Complement to BD136, BD138 and BD140 respectively
1. Emitter 2.Collector 3.Base