05/2006
AWT6272R
HELP
TM
Cellular/WCDMA 3.4 V/29 dBm
Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.5
M20 Package
10 Pin 4 mm x 4 mm x 1.1 mm
Surface Mount Module
Figure 1: Block Diagram
MMIC technology offering state-of-the-art reliability,
temperature stability, and ruggedness. Selectable bias
modes that optimize efficiency for different output power
levels, and a shutdown mode with low leakage current,
increase handset talk and standby time. The self-
contained 4 mm x 4 mm x 1.1 mm surface mount
package incorporates matching networks optimized
for output power, efficiency, and linearity in a 50 Ω
system.
FEATURES
• InGaP HBT Technology
• High Efficiency:
44 % @ POUT = +29 dBm
20 % @ POUT = +16 dBm
15 % @ POUT = +7 dBm
• Low Quiescent Current: 16 mA
• Low Leakage Current in Shutdown Mode: <1 µA
• VREF = +2.85 V (+2.75 V min over temp)
• Optimized for a 50 Ω System
• Low Profile Miniature Surface Mount Package
Option: 1.1 mm Max
• RoHS Compliant Package, 250
o
C MSL-3
• HSDPA Compliant (no backoff)
APPLICATIONS
• Dual Band WCDMA Wireless Handsets
• Dual Mode 3GPP Wireless Handsets
PRODUCT DESCRIPTION
The AWT6272R meets the increasing demands for
higher output power in UMTS handsets. The PA module
is optimized for VREF = +2.85 V, a requirement for
compatibility with the Qualcomm® 6250 chipset. The
device is manufactured on an advanced InGaP HBT
Bias Control
VCC
VREF
RFIN
RFOUT
GND
VMODE
1
7
5
8
10
6
GND at slug (pad)
3
9
4
2
GND
VCC
GND
GND
A
WT6272R