01/2006
Figure 1: Block Diagram
FEATURES
• Internal Reference Voltage
• Integrated Power Control Scheme
• InGaP HBT Technology
• ESD Protection on All Pins (2.5 kV)
• Low profile 1.3 mm
• Small Package Outline 7 mm x 7 mm
• EGPRS Capable (class 12)
• RoHS Compliant Package, 250
o
C MSL-3
GMSK MODE
• Integrated power control (CMOS)
• +35.5 dBm GSM850/900 Output Power
• +33.5 dBm DCS/PCS Output Power
• 55 % GSM850/900 PAE
• 53 % DCS/PCS PAE
• Power control range > 50 dB
EDGE MODE
• +29 dBm GSM850/900 Output Power
• +28.5 dBm DCS/PCS Output Power
• 25 % GSM850/900 PAE
• 30 % DCS/PCS PAE
• 64 dB Typical ACPR (400 kHz)
• 74 dB Typical ACPR (600 kHz)
APPLICATIONS
• Dual/Tri/Quad Band Handsets and PDAs
• Dual/Tri/Quad Band Wireless Data Cards
PRODUCT DESCRIPTION
This power amplifier module supports dual, tri and
quad band applications for GMSK and 8-PSK modu-
lation schemes using an open loop polar architec-
ture. There are two amplifier chains, one to support
GSM850/900 bands, the other for DCS/PCS bands.
Each amplification chain is optimized for excellent
EDGE efficiency, power, and linearity in a Polar loop
environment while maintaining high efficiency in the
GSM/GPRS mode.
The module includes an internal reference voltage
and integrated power control scheme for use in both
GMSK and 8-PSK operation. This facilitates fast and
easy production calibration and reduces the num-
ber of external components required to complete a
power control function.
AWT6168R
Quad-band GSM/GPRS/Polar EDGE
Power Amplifier Module
with Integrated Power Control
PRELIMINARY DATA SHEET - REV 1.0
GSM850/900_IN
TX_EN
DCS/PCS_IN
GSM850/900_OUT
GSM850/900
Bias/Power
Control
DCS/PCS_OUT
DCS/PCS
BS
VRAMP
VBATT
CEXT
M11 Package
18 Pin 7 mm x 7 mm x 1.3 mm
Surface Mount Module
A
W
T6168R
The amplifier’s power control range is typically 55
dB, with the output power set by applying an analog
voltage to VRAMP. All of the RF ports for this device are
internally matched to 50Ω.