01/2005
PRODUCT DESCRIPTION
As with previous generations, the AWT6167
integrated CMOS power control scheme simplifies
the design of the transmitter by eliminating the need
for external power control circuitry.
The AWT6167 input and output terminals are internal
matched to 50 ohms and DC blocked, reducing the
AWT6167
GSM900/DCS
Dual Band Power Amplifier Module
With Integrated Power Control
ADVANCED PRODUCT INFORMATION - Rev 0.1
18 Pin
6 mm x 6 mm x 1.3 mm
Amplifier Module
FEATURES
• Integrated Vreg (regulated supply)
• Harmonic Performance ≤ -25 dBm
• High Efficiency (PAE) at Pmax:
-GSM900, 56 %
-DCS, 53 %
• +35 dBm GSM900 Output Power at 3.5 V
• +33 dBm DCS Output Power at 3.5 V
• 55 dB dynamic range
• GPRS Class 12 Capable
APPLICATIONS
• Dual Band Handsets & PDAs
number of external components required in the final
application. Both PA die, GSM900 and DCS, are
fabricated using state of the art InGaP HBT
technology, known for it is proven reliability and
temperature stability.
Figure 1: Block Diagram
CMOS BIAS/Integrated Power Control
V
CC2
H(s)
V
CC2
DCS
IN
GSM900
IN
GSM900
OUT
DCS
OUT
V
CC_OUT
B
S
TX
EN
V
BATT
V
REG
V
RAMP
MATCH
MATCH MATCH
MATCH
A
W
T6167T
6
1
6
7