02/2006
PRODUCT DESCRIPTION
As with previous generations, the AWT6166R
integrated CMOS power control scheme simplifies
the design of the transmitter by eliminating the need
for external power control circuitry.
The AWT6166R input and output terminals are
internal matched to 50 ohms and DC blocked,
AWT6166R
GSM850/GSM900/DCS/PCS
Quad Band Power Amplifier Module
With Integrated Power Control
Data Sheet - Rev 2.0
M15 Package
18 Pin 6 mm x 6 mm x 1.3 mm
Amplifier Module
FEATURES
• Integrated Vreg (regulated supply)
• Harmonic Performance ≤ -20 dBm
• High Efficiency (PAE) at Pmax:
-GSM850, 53%
-GSM900, 55%
-DCS, 53%
-PCS, 53%
• +35 dBm GSM850/900 Output Power at 3.5 V
• +33 dBm DCS/PCS Output Power at 3.5 V
• 55 dB Dynamic Range
• GPRS Class 12 Capable
• RoHS Compliant Package, 250°C MSL-3
APPLICATIONS
• Dual/Tri/Quad Band Handsets & PDAs
CMOS BIAS/Integrated Power Control
V
CC2
H(s)
V
CC2
DCS/PCS
IN
GSM850/900
IN
GSM850/900
OUT
DCS/PCS
OUT
V
CC_OUT
B
S
TX
EN
V
BATT
C
EXT
V
RAMP
MATCH
MATCH MATCH
MATCH
reducing the number of external components
required in the final application. Both PA die,
GSM850/900 and DCS/PCS, are fabricated using
state of the art InGaP HBT technology, known for it is
proven reliability and temperature stability.
Figure 1: Block Diagram