12/2004
AWT6133
PCS/CDMA 3.5V/29dBm
Linear Power Amplifier Module
Data Sheet - Rev 2.0
M7 Package
10 Pin 4 mm x 4 mm x 1.5 mm
Surface Mount Module
Figure 1: Block Diagram
Bias Control
VCC
VREF
RFIN
RFOUT
GND
VMODE
1
7
5
8
10
6
GND at slug (pad)
3
9
4
2
GND
VCC
GND
GND
ruggedness. Selectable bias modes that optimize
efficiency for different output power levels, and a
shutdown mode with low leakage current, increase
handset talk and standby time. The self-contained
4 mm x 4 mm x 1.5 mm surface mount package
incorporates matching networks optimized for output
power, efficiency, and linearity in a 50 Ω system.
FEATURES
• InGaP HBT Technology
• High Efficiency: 38%
• Low Quiescent Current: 50 mA
• Low Leakage Current in Shutdown Mode: <1 µA
•VREF = +2.85 V (+2.7 V min over temp)
• Optimized for a 50 Ω System
• Low Profile Miniature Surface Mount Package:
1.56 mm Max
• CDMA 1XRTT Compliant
• CDMA 1xEV-DO Compliant
APPLICATIONS
• PCS CDMA Wireless Handsets
• Dual Band CDMA Wireless Handsets
PRODUCT DESCRIPTION
The AWT6133 meets the increasing demands for
higher efficiency and linearity in CDMA 1XRTT
handsets. The PA module is optimized for VREF = +2.85 V,
a requirement for compatibility with the Qualcomm®
6000 chipset. The device is manufactured on an
advanced InGaP HBT MMIC technology offering
state-of-the-art reliability, temperature stability, and