01/2006
AWT6108R
GSM850/GSM900/DCS/PCS
Quad Band Power Amplifier Module
With Integrated Power Control
PRELIMINARY DATA SHEET - Rev 1.0
20 Pin 7 mm x 10 mm x 1.4 mm
Surface Mount Module
FEATURES
• InGaP HBT Technology
• Integrated Power Control (CMOS)
• Quad Band Applications
• +35 dBm GSM Output Power at 3.5 V
• +33 dBm DCS/PCS Output Power at 3.5 V
• 55% GSM PAE
• 50% DCS/PCS PAE
• Small Footprint: 7 x 10 mm
• Low Profile: 1.4 mm
• Power Control Range: >50 dB
• GPRS Capable (Class 12)
• RoHS Compliant Package, 250
o
C MSL-3
APPLICATIONS
• GSM850/GSM900/DCS/PCS Handsets
• Dual/Tri/Quad Band PDA
PRODUCT DESCRIPTION
This quad band power amplifier module is designed
to support dual, tri and quad band applications. The
module includes an integrated power control
scheme that facilitates fast and easy production
calibration and reduces the number of external
components required to complete a power control
function.
The amplifier’s power control range is typically
55dB, with the output power set by applying an
analog voltage to VRAMP. The logical control inputs,
Figure 1: Block Diagram
TX_EN and BS, are both 1.8 V and 3 V logic
compliant. The TX_EN is used to enable the
amplifier typically with the TX burst. The BS is used
to select which amplifier is enabled.
There are two amplifier chains, one to support
GSM850/900 bands, the other for DCS/PCS bands.
All of the RF ports for this device are internally
matched to 50 Ω. Internal DC blocks are provided at
the RF ports.
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T6108R