07/2003
S24 Package
SOT-89
Figure 1: Block Diagram
AGB3309
50Ω High Linearity Low Noise
Internally Biased Wideband Gain Block
PRELIMINARY DATA SHEET - Rev 1.0
FEATURES
• On-chip Active Bias
• DC-3500 MHz Operation Bandwidth
• +35 dBm Output IP3
• 5 dB Noise Figure at 850 MHz
• 15 dB Gain at 850 MHz
• +18 dBm P1dB
• SOT-89 Package
• Single +5 V Supply
• Case Temperature: -40 to +85 °C
APPLICATIONS
• Cellular Base Stations for W-CDMA, CDMA,
TDMA, GSM, PCS and CDPD systems
• Fixed Wireless
• MMDS/WLL
• WLAN
PRODUCT DESCRIPTION
The AGB3309 is one of a series of high performance
InGaP HBT amplifiers designed for use in
applications requiring high linearity, low noise, and
low distortion. Active bias circuits on-chip eliminate
the need for external resistive feedback, and no
external matching components are needed for
insertion into a 50Ω system. With a high output IP3,
low noise figure, and wide band operation, the
AGB3309 is ideal for wireless infrastructure
applications such as Cellular Base Stations, MMDS,
and WLL. Offered in a low cost SOT-89 surface mount
package, the AGB3309 requires a single +5 V supply,
and typically consumes 0.325 Watts of power.
RF Output
/ Bias
RF Input
Active
Bias