1
SEMICONDUCTORS
SUMMARY
Continuous drain source voltage V
DS
=60V
On-state resistance 550m
Nominal load current 1.6A
Clamping Energy 550mJ
DESCRIPTION
Self protected low side MOSFET. Monolithic over temperature, over current, over
voltage (active clamp) and ESD protected logic level power MOSFET intended as a
general purpose switch.
FEATURES
• High continuous current rating
• Logic level input
• Input protection (ESD)
• Thermal shutdown with auto restart
• Over load protection
• Short circuit protection with pulse start capability and auto restart
• Over voltage protection (active clamp)
• Load dump protection (actively protects load)
APPLICATIONS
• Especially suited for loads with a high
inrush current such as lamps and
motors
• All types of resistive, inductive and
capacitive loads in switching
applications
• H9262C compatible power switch for 12V
and 24V DC applications and for 42V
Powernet
• Automotive rated
• Replaces electromechanical relays and
discrete circuits
BSP75G
DRAFT ISSUE C - NOVEMBER 2003
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET™
MOSFET
ADVANCE INFORMATION
SOT223
PACKAGE
PINOUT
DIAGRAM
FUNCTIONAL BLOCK DIAGRAM