MBD110–1/5
1
3
2
Dual SCHOTTKY Barrier Diodes
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage MBD110DWT1 V R 7.0 Vdc
MBD330DWT1 30
MBD770DWT1 70
Forward Power Dissipation P F 120 mW
T A = 25°C
Junction Temperature T J –55 to +125 °C
Storage Temperature Range T stg –55 to +150 °C
DEVICE MARKING
MBD110DWT1 = M4 MBD330DWT1 = T4 MBD770DWT1 = H5
Thermal Clad is a trademark of the Bergquist Company.
6
4
5
SOT–363
CASE 419B–01, STYLE 6
MBD110DWT1
MBD330DWT1
MBD770DWT1
Application circuit designs are moving toward the consolidation of
device count and into smaller packages. The new SOT–363 package is
a solution which simplifies circuit design, reduces device count, and
reduces board space by putting two discrete devices in one small six–
leaded package. The SOT–363 is ideal for low–power surface mount
applications where board space is at a premium, such as portable
products.
123
Anode N/C Cathode
Cathode N/C Anode
654
Surface Mount Comparisons:
SOT–363 SOT–23
Area (mm
2
) 4.6 7.6
Max Package P D (mW) 120 225
Device Count 2 1
Space Savings:
Package 1 × SOT–23 2 × SOT–23
SOT–363 40% 70%
The MBD110DW, MBD330DW, and MBD770DW devices are spin–offs of our popular
MMBD101LT1, MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed
for high–efficiency UHF and VHF detector applications. Readily available to many other
fast switching RF and digital applications.
Extremely Low Minority Carrier Lifetime
Very Low Capacitance
Low Reverse Leakage