BC856b–1/5
1
3
2
Dual General Purpose Transistors
PNP Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.
MAXIMUM RATINGS
Rating Symbol BC856 BC857 BC858 Unit
Collector–Emitter Voltage V
CEO
–65 –45 –30 V
Collector–Base Voltage V
CBO
–80 –50 –30 V
Emitter–Base Voltage V
EBO
–5.0 –5.0 –5.0 V
Collector Current -Continuous I
C
–100 –100 –100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation P
D
380 mW
Per Device 250 mW
FR– 5 Board, (1) T
A
= 25°C
Derate above 25°C 3.0 mW/°C
Thermal Resistance, Junction to Ambient R
θJA
328 °C/W
Junction and Storage Temperature T
J
, T
stg
–55 to +150 °C
1. FR–5 = 1.0 x 0.75 x 0.062 in.
ORDERING INFORMATION
Device Package Shipping
BC856BDW1T1 SOT–363 3000 Units/Reel
BC857BDW1T1 SOT–363 3000 Units/Reel
BC857CDW1T1 SOT–363 3000 Units/Reel
BC858BDW1T1 SOT–363 3000 Units/Reel
BC858CDW1T1 SOT–363 3000 Units/Reel
1
32
6
45
See Table
Q
1
Q
2
6
4
5
SOT–363/SC–88
CASE 419B STYLE 1
BC856BDW1T1
BC857BDW1T1
BC857CDW1T1
BC858BDW1T1
BC858CDW1T1