S25–1/2
FEATURES
· High speed switching for RF signals
· Low diode capacitance
· Low diode forward resistance
· Very low series inductance
· For applications up to 3 GHz.
APPLICATIONS
· RF attenuators and switches.
DESCRIPTION
Planar PIN diode in a SOD323 small SMD plastic package.
Silicon PIN diode
SOD523 SC-79
1
2
BAP63 – 03
2
ANODE
1
CATHODE
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V R continuous reverse voltage – 50 V
II
F
continuous forward current – 100 mA
P tot total power dissipation T s < 90°C – 500 mW
T
stg
storage temperature -65 +150 °C
T j junction temperature -65 +150 °C
ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V F forward voltage I F =50 mA 0.95 1.1 V
I
R
reverse current V
R
=35 V – 10 nA
C d diode capacitance V R = 0; f = 1 MHz 0.4 – pF
V
R
= 1 V; f = 1 MHz 0.35 – pF
V R = 20 V; f = 1 MHz 0.27 0.32 pF
r
D
diode forward resistance I
F
= 0.5 mA; f = 100 MHz; note 1 2.5 3.5 Ω
I F = 1 mA; f = 100 MHz; note 1 1.95 3 Ω
I
F
= 10 mA; f = 100 MHz; note 1 1.17 1.8 Ω
I F = 100 mA; f = 100 MHz; note 1 0.9 1.5 Ω
|s
21
|
2
isolation V
R
= 0; f = 900 MHz 15.4 – dB
V R = 0; f = 1800 MHz 10.1 – dB
V
R
= 0; f = 2450 MHz 7.8 – dB
|s 21|
2
insertion loss I F = 0.5 mA; f = 900 MHz 0.21 – dB
I
F
= 0.5 mA; f = 1800 MHz 0.28 – dB
I F = 0.5 mA; f = 2450 MHz 0.38 – dB
|s
21
|
2
insertion loss I
F
= 1 mA; f = 900 MHz 0.18 – dB
I F = 1 mA; f = 1800 MHz 0.26 – dB
I
F
= 1 mA; f = 2450 MHz 0.35 – dB
|s 21|
2
insertion loss I F = 10 mA; f = 900 MHz 0.13 – dB
I
F
= 10 mA; f = 1800 MHz 0.20 – dB
I F = 10 mA; f = 2450 MHz 0.30 – dB
|s
21
|
2
insertion loss I
F
= 100 mA; f = 900 MHz 0.10 – dB
I F = 100mA; f = 1800 MHz 0.18 – dB
I
F
= 100 mA; f = 2450 MHz 0.28 – dB