G11–1/2
Schottky Barrier Diodes
DEVICE MARKING
BAT54RLT1 = LV3
MAXIMUM RATINGS (T
J
= 125°C unless otherwise noted)
Rating Symbol Value Unit
Reverse Voltage V
R
30 Volts
Forward Power Dissipation P
F
@ T
A
= 25°C 200 mW
Derate above 25°C 2.0 mW/°C
Operating Junction T
J
Temperature Range –55 to +125 °C
Storage Temperature Range T
stg
–55 to +150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage (I
R
= 10 µA) V
(BR)R
30 — — Volts
Total Capacitance (V
R
= 1.0 V, f = 1.0 MHz) C
T
— 7.6 10 pF
Reverse Leakage (V
R
= 25 V) I
R
— 0.5 2.0 µAdc
Forward Voltage (I
F
= 0.1 mAdc) V
F
— 0.22 0.24 Vdc
Forward Voltage (I
F
= 30 mAdc) V
F
— 0.41 0.5 Vdc
Forward Voltage (I
F
= 100 mAdc) V
F
— 0.52 1.0 Vdc
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc) Figure 1 t
rr
— — 5.0 ns
Forward Voltage (I
F
= 1.0 mAdc) V
F
— 0.29 0.32 Vdc
Forward Voltage (I
F
= 10 mAdc) V
F
— 0.35 0.40 Vdc
BAT54RLT1
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
30 VOLTS
SILICON HOT- CARRIER
DETECTOR AND
SWITCHING
DIODES
3
CATHODE
1
ANODE
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low forward
voltage reduces conduction loss. Miniature surface mount package is excellent
for hand held and portable applications where space is limited.
Extremely Fast Switching Speed
Low Forward Voltage — 0.35 Volts (Typ) @ I
F
= 10 mAdc
1
3
2