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General purpose PIN diode
SOD523 SC-79
1
2
BAP50 – 02
2
ANODE
1
CATHODE
FEATURES
· Low diode capacitance
· Low diode forward resistance.
APPLICATIONS
· General RF applications.
DESCRIPTION
General purpose PIN diode in a SOD523 small SMD plastic package.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
continuous reverse voltage – 50 V
II F continuous forward current – 50 mA
P
tot
total power dissipation T
s
=90°C – 715 mW
T stg storage temperature -65 +150 °C
T
j
junction temperature -65 +150 °C
ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX. UNIT
V F forward voltage I F =50 mA – 0.95 1.1 V
V
R
reverse voltage I
R
=10µA50–
I R reverse current V R =50 V – – 100 nA
C
d
diode capacitance V
R
= 0; f = 1 MHz – 0.4 – pF
V R = 1 V; f = 1 MHz – 0.3 0.55 pF
V
R
= 5 V; f = 1 MHz – 0.22 0.35 pF
r D diode forward resistance I F = 0.5 mA; f = 100 MHz; note 1 – 25 40 Ω
I
F
= 1 mA; f = 100 MHz; note 1 – 14 25 Ω
I F = 10 mA; f = 100 MHz; note 1 – 3 5 Ω
|s
21
|
2
isolation V
R
= 0; f = 900 MHz – 20.4 – dB
V R = 0; f = 1800 MHz – 17.3 – dB
V
R
= 0; f = 2450 MHz – 15.5 – dB
|s 21|
2
insertion loss I F = 0.5 mA; f = 900 MHz – 1.74 – dB
I
F
= 0.5 mA; f = 1800 MHz – 1.79 – dB
I F = 0.5 mA; f = 2450 MHz – 1.88 – dB
|s
21
|
2
insertion loss I
F
= 1 mA; f = 900 MHz – 1.03 – dB
I F = 1 mA; f = 1800 MHz – 1.09 – dB
I
F
= 1 mA; f = 2450 MHz – 1.15 – dB
|s 21|
2
insertion loss I F = 10 mA; f = 900 MHz – 0.26 – dB
I
F
= 10 mA; f = 1800 MHz – 0.32 – dB
I F = 10 mA; f = 2450 MHz – 0.34 – dB