S7–1/2
Switching Diode
CASE 477– 02, STYLE 1
SOD– 323
1
2
BAS16HT1
2
ANODE
1
CATHODE
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage V R 75 Vdc
Peak Forward Current I F 200 mAdc
Peak Forward Surge Current I FM(surge) 500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR-5 Board,* P D 200 mW
T A = 25°C
Derate above 25°C 1.57 mW/°C
Thermal Resistance Junction to Ambient R θJA 635 °C/W
Junction and Storage Temperature T J , T stg 150 °C
**FR-4 Minimum Pad
DEVICE MARKING
BAS16HT1 = A6
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(V R = 75 Vdc)
(V R = 75 Vdc, T J = 150°C)
(V R = 25 Vdc, T J = 150°C)
I R
—
—
—
1.0
50
30
µAdc
Reverse Breakdown Voltage
(I BR = 100 µAdc)
V (BR) 75 — Vdc
Forward Voltage
(I F = 1.0 mAdc)
(I F = 10 mAdc)
(I F = 50 mAdc)
(I F = 150 mAdc)
V F
—
—
—
—
715
855
1000
1250
mV
Diode Capacitance
(V R = 0, f = 1.0 MHz)
Reverse Recovery Time
(I F = I R = 10 mAdc, R L = 50 Ω)
C D — 2.0 pF
Forward Recovery Voltage
(I F = 10 mAdc, t r = 20 ns)
V FR — 1.75 Vdc
t rr — 6.0 ns
Stored Charge
(I F = 10 mAdc to V R = 5.0 Vdc, R L = 500 Ω)
Q S —45pC