Symbol Max p-channel Units
V
DS
V
V
GS
V
I
DM
T
J
, T
STG
°C
Symbol Typ Max
54 65
102 125
R
θJL
58 70
Symbol Typ Max
50 60
85 110
R
θJL
41 50
Maximum Junction-to-Lead
C
Steady-State °C/W
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics: p-channel
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
Junction and Storage Temperature Range -55 to 150 -55 to 150
Thermal Characteristics: n-channel
2.1
W
T
A
=70°C 1.2 1.3Power Dissipation
T
A
=25°C
P
D
1.9
AT
A
=70°C 3.2 -2.9
Pulsed Drain Current
B
12 -12
Continuous Drain
Current
A
T
A
=25°C
I
D
4
-30
Gate-Source Voltage ±20 ±20
-3.6
Parameter Max n-channel
Drain-Source Voltage 30
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
AON4603
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 30V -30V
I
D
= 4A -3.6A (V
GS
= ±10V)
R
DS(ON)
< 75mΩ

< 100mΩ (V
GS
= ±10V)
R
DS(ON)
< 115mΩ < 180mΩ (V
GS
= ±4.5V)
General Description
The AON4603 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
Standard Product AON4603 is Pb-free (meets ROHS
& Sony 259 specifications). AON4603L is a Green
Product ordering option. AON4603 and AON4603L are
electrically identical.
DFN2X3
G2
S2
G1
S1
D2
D2
D1
D11
2
3
4
8
7
6
5
G2
D2
S2
G1
D1
S1
n-channel p-channel
Alpha & Omega Semiconductor, Ltd.